savantic semiconductor product specification silicon pnp power transistors 2SA1332 d escription with to-220fa package high v c eo applications power amplifier applications driver stage amplifier applications pinning pin description 1 emitter 2 collector 3 base absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -160 v v ceo collector-emitter voltage open base -160 v v ebo emitter-base voltage open collector -5 v i c collector current -1.5 a i b base current -0.15 a p c collector power dissipation t c =25 20 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon pnp power transistors 2SA1332 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =10ma , i b =0 -160 v v (br)ebo emitter-base breakdown voltage i e =1ma , i c =0 -5 v v cesat collector-emitter saturation voltage i c =-0.5a, i b =-50ma -1.5 v v be base-emitter voltage i c =-0.1a ; v ce =-10v -1.0 v i cbo collector cut-off current v cb =-160v, i e =0 -1.0 a i ebo emitter cut-off current v eb =-5v; i c =0 -1.0 a h fe dc current gain i c =-0.1a ; v ce =-10v 60 240 f t transition frequency i c =-0.1a ; v ce =-10v 200 mhz
savantic semiconductor product specification 3 silicon pnp power transistors 2SA1332 package outline fig.2 outline dimensions (unindicated tolerance: 0.15 mm)
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